2N5116 TO-18 3L ROHS

2N5114 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75Ω LOW ON RESISTANCE LOW CAPACITANCE ABSOLUTE MAXIMUM 6pF RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature -55 to 150°C Maximum Power Dissipation Continuous Power Dissipation3 500mW Maximum Currents Gate Current -50mA Maximum Voltages Gate to Drain 30V Gate to Source 30V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) TYP 2N5114 SYM. CHARACTERISTIC BVGSS Gate to Source Breakdown Voltage VGS(off) Gate to Source Cutoff Voltage VGS(F) Gate to Source Forward Voltage -0.7 -1 -1.0 -1.3 VDS(on) Drain to Source On Voltage -0.7 MIN MAX 30 5 2N5115 MIN MAX 30 10 3 2N5116 MIN 6 1 -1 IGSS Gate Leakage Current 5 IG Gate Operating Current -5 Drain Cutoff Current -110 500 V IG = -1mA, VDS = 0V VGS = 0V, ID = -15mA -5 -55 VGS = 0V, ID = -3mA mA 500 VDS = -18V, VGS = 0V VDS = -15V, VGS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA -500 -10 pA -500 -10 rDS(on) VDS = -15V, ID = -1nA VGS = 0V, ID = -7mA -195 500 -10 ID(off) 4 -1 -0.6 -15 CONDITIONS IG = 1µA, VDS = 0V -0.8 -30 Drain to Source Saturation Current2 UNIT 30 -0.5 IDSS MAX VDS = -15V, VGS = 7V -500 Drain to Source On Resistance 75 100 VDS = -15V, VGS = 12V 150 VDS = -15V, VGS = 5V Ω VGS = 0V, ID = -1mA Note: All Min & Max limits are absolute values. Negative signs indicate electrical polarity only. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201134 07/24/2019 Rev#A7 ECN# 2N5114 DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. 2N5114 2N5115 2N5116 CHARACTERISTIC TYP gfs Forward Transconductance 4.5 mS gos Output Conductance 20 µS rds(on) Ciss Crss MIN Drain to Source On Resistance Input Capacitance Reverse Transfer Capacitance MAX MIN MAX MIN MAX 75 100 150 20 25 25 25 5 7 6 7 6 en Equivalent Noise Voltage 7 20 td(on) tr td(off) tf CHARACTERISTIC Turn On Time Turn Off Time 2N5114 CONDITIONS VDS = -15V, ID = -1mA f = 1kHz VGS = 0V, ID = -1mA f = 1kHz VDS = -15V, VGS = 0V f = 1MHz VDS = 0V, VGS = 12V f = 1MHz pF VDS = 0V, VGS = 7V f = 1MHz VDS = 0V, VGS = 5V f = 1MHz VDG = -10V, ID = -10mA nV/√Hz f = 1 kHz Ω SWITCHING CIRCUIT CHARACTERISTICS SWITCHING CHARACTERISTICS (max) SYM. UNIT 2N5115 2N5116 6 10 12 10 20 30 6 8 10 15 30 50 UNITS ns SYM. 2N5114 2N5115 2N5116 VDD -10V -6V -6V VGG 20V 12V 8V RL 430Ω 910Ω 2kΩ RG 100Ω 220Ω 390Ω ID(on) -15mA -7mA -3mA VGS(H) 0V 0V 0V VGS(L) -11V -7V -5V SWITCHING TEST CIRCUIT VDD VGG VGS(H) VGS(L) 51Ω RL 1.2kΩ 0.1µF RG 7.5kΩ 1.2kΩ Sampling Scope 51Ω 51Ω Note: All Dimensions are in inches NOTES 1. 2. 3. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Derate 3mW/°C above 25°C. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201134 07/24/2019 Rev#A7 ECN# 2N5114